Product overview
- Part Number
- A3G26H501W17SR3
- Manufacturer
- NXP Semiconductors
- Product Category
- RF MOSFET Transistors
- Description
- RF MOSFET Transistors Airfast RF Power GaN Transistor, 2496-2690 MHz, 56 W Avg., 48 V
Documents & Media
- Datasheets
- A3G26H501W17SR3
Product Attributes
- Gain :
- 13.7 dB
- Id - Continuous Drain Current :
- 42 mA
- Maximum Operating Temperature :
- + 225 C
- Minimum Operating Temperature :
- - 55 C
- Mounting Style :
- SMD/SMT
- Operating Frequency :
- 2496 MHz to 2690 MHz
- Output Power :
- 56 W
- Package / Case :
- NI-780S-4S2S
- Packaging :
- Reel
- Technology :
- GaN
- Vds - Drain-Source Breakdown Voltage :
- 150 V
Description
RF MOSFET Transistors Airfast RF Power GaN Transistor, 2496-2690 MHz, 56 W Avg., 48 V
Price & Procurement
Associated Product
-
-
-
-
-
-
-
Amphenol FCIAutomotive Connectors Minitek MicroSpaceXS,1.27mm Crimp-to-Wire Connector Platform, Wire to Board Header, 3 Position., STG, Top Latch, Gold, WaterProof
-
-
-
