Product overview
- Part Number
- A2V07H525-04NR6
- Manufacturer
- NXP Semiconductors
- Product Category
- RF MOSFET Transistors
- Description
- RF MOSFET Transistors Airfast RF Power LDMOS Transistor, 595-851 MHz, 120 W Avg., 48 V
Documents & Media
- Datasheets
- A2V07H525-04NR6
Product Attributes
- Gain :
- 17.5 dB
- Id - Continuous Drain Current :
- 2.8 A
- Maximum Operating Temperature :
- + 150 C
- Minimum Operating Temperature :
- - 40 C
- Mounting Style :
- SMD/SMT
- Operating Frequency :
- 595 MHz to 851 MHz
- Output Power :
- 120 W
- Package / Case :
- OM-1230-4L
- Packaging :
- Reel
- Technology :
- SI
- Transistor Polarity :
- Dual N-Channel
- Vds - Drain-Source Breakdown Voltage :
- - 500 mV, 105 V
Description
RF MOSFET Transistors Airfast RF Power LDMOS Transistor, 595-851 MHz, 120 W Avg., 48 V
Price & Procurement
Associated Product
-
-
-
-
-
-
-
Amphenol FCIAutomotive Connectors Minitek MicroSpaceXS,1.27mm Crimp-to-Wire Connector Platform, Wire to Board Header, 3 Position., STG, Top Latch, Gold, WaterProof
-
-
-
You May Also Be Interested In
L777TWB5W5PP2Y4R
L77TWB5W5SMP3V4F
DCL27W2S300G00LF
L717TWC21WA4PP3SYRM84
DCME-25W3P-K127
DCMY-25W3P-K127
L717TWC21WA4PP2SYRM84
DDME-24W7P-K127
DDMY-24W7P-K127
DBL17W2S500A00LF
DA7W2S500H30LF
DAM-11W1S-A191-A197
L717TWC27W2PP3SYRM84
DAV3W3S700M30LF
DBO21W1P300G30LF
L77TWB5W5SMP3V4R
L777TWB17W2PP2SY
L77TWB5W5SEP3V
L717TWP2W2PMP2V4FRM6
DDMY-24W7S-A191-A197
