Product overview
- Part Number
- QPD1025
- Manufacturer
- Qorvo
- Product Category
- RF MOSFET Transistors
- Description
- RF MOSFET Transistors 1-1.1GHz 1800 Watt Gain 22.5dB 65V GaN
Documents & Media
- Datasheets
- QPD1025
Product Attributes
- Gain :
- 22.5 dB
- Id - Continuous Drain Current :
- 28 A
- Maximum Operating Temperature :
- + 85 C
- Minimum Operating Temperature :
- - 40 C
- Operating Frequency :
- 1 GHz to 1.1 GHz
- Output Power :
- 1.862 kW
- Package / Case :
- NI-1230-4
- Packaging :
- Tray
- Technology :
- GaN-on-SiC
- Transistor Polarity :
- Dual N-Channel
- Vds - Drain-Source Breakdown Voltage :
- 65 V
Description
RF MOSFET Transistors 1-1.1GHz 1800 Watt Gain 22.5dB 65V GaN
Price & Procurement
Associated Product
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Amphenol FCIAutomotive Connectors Minitek MicroSpaceXS,1.27mm Crimp-to-Wire Connector Platform, Wire to Board Header, 3 Position., STG, Top Latch, Gold, WaterProof
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