Product overview
- Part Number
- A3G35H100-04SR3
- Manufacturer
- NXP Semiconductors
- Product Category
- RF MOSFET Transistors
- Description
- RF MOSFET Transistors Airfast RF Power GaN Transistor, 3400-3600 MHz, 14 W Avg., 48 V
Documents & Media
- Datasheets
- A3G35H100-04SR3
Product Attributes
- Gain :
- 14 dB
- Id - Continuous Drain Current :
- 8.04 mA
- Maximum Operating Temperature :
- + 150 C
- Minimum Operating Temperature :
- - 55 C
- Mounting Style :
- SMD/SMT
- Operating Frequency :
- 3400 MHz to 3600 MHz
- Output Power :
- 14 W
- Package / Case :
- NI-780S-4L
- Packaging :
- Cut Tape, Reel
- Technology :
- GaN-on-Si
- Transistor Polarity :
- Dual N-Channel
- Vds - Drain-Source Breakdown Voltage :
- 125 V
Description
RF MOSFET Transistors Airfast RF Power GaN Transistor, 3400-3600 MHz, 14 W Avg., 48 V
Price & Procurement
Associated Product
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Amphenol FCIAutomotive Connectors Minitek MicroSpaceXS,1.27mm Crimp-to-Wire Connector Platform, Wire to Board Header, 3 Position., STG, Top Latch, Gold, WaterProof
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