Product overview
- Part Number
- MRF101BN
- Manufacturer
- NXP Semiconductors
- Product Category
- RF MOSFET Transistors
- Description
- RF MOSFET Transistors Wideband RF Power LDMOS Transistor, 100 W CW over 1.8-250 MHz, 50 V
Documents & Media
- Datasheets
- MRF101BN
Product Attributes
- Gain :
- 21.1 dB
- Id - Continuous Drain Current :
- 8.8 A
- Maximum Operating Temperature :
- + 150 C
- Minimum Operating Temperature :
- - 40 C
- Mounting Style :
- Through Hole
- Operating Frequency :
- 1.8 MHz to 250 MHz
- Output Power :
- 100 W
- Package / Case :
- TO-220-3
- Packaging :
- Tube
- Technology :
- SI
- Transistor Polarity :
- N-Channel
- Vds - Drain-Source Breakdown Voltage :
- 133 V
Description
RF MOSFET Transistors Wideband RF Power LDMOS Transistor, 100 W CW over 1.8-250 MHz, 50 V
Price & Procurement
Associated Product
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Amphenol FCIAutomotive Connectors Minitek MicroSpaceXS,1.27mm Crimp-to-Wire Connector Platform, Wire to Board Header, 3 Position., STG, Top Latch, Gold, WaterProof
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