Product overview

Part Number
MRFX035HR5
Manufacturer
NXP Semiconductors
Product Category
RF MOSFET Transistors
Description
RF MOSFET Transistors Wideband RF Power LDMOS Transistor, 35 W CW over 1.8-512 MHz, 65 V

Documents & Media

Datasheets
MRFX035HR5

Product Attributes

Gain :
24.8 dB
Id - Continuous Drain Current :
100 mA
Maximum Operating Temperature :
+ 150 C
Minimum Operating Temperature :
- 40 C
Mounting Style :
Screw Mount
Operating Frequency :
1.8 MHz to 512 MHz
Output Power :
35 W
Package / Case :
NI-360H-2SB
Packaging :
Cut Tape, Reel
Technology :
SI
Transistor Polarity :
N-Channel
Vds - Drain-Source Breakdown Voltage :
193 V

Description

RF MOSFET Transistors Wideband RF Power LDMOS Transistor, 35 W CW over 1.8-512 MHz, 65 V

Price & Procurement

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