Datasheets

QPD1019

Gain :

16.3 dB

Id - Continuous Drain Current :

15 A

Maximum Drain Gate Voltage :

55 V

Maximum Operating Temperature :

+ 85 C

Minimum Operating Temperature :

- 40 C

Mounting Style :

SMD/SMT

Operating Frequency :

2.9 GHz to 3.3 GHz

Package / Case :

17.4 mm x 24 mm x 4.31 mm

Pd - Power Dissipation :

522 W

Technology :

GaN-on-SiC

Transistor Polarity :

N-Channel

Transistor Type :

HEMT

Vds - Drain-Source Breakdown Voltage :

150 V

Vgs - Gate-Source Breakdown Voltage :

- 7 V to 2 V