Datasheets

TGF2929-HM

Gain :

17.4 dB

Id - Continuous Drain Current :

7.2 A

Maximum Operating Temperature :

+ 85 C

Minimum Operating Temperature :

- 40 C

Mounting Style :

SMD/SMT

Operating Frequency :

DC to 3.5 GHz

Output Power :

132 W

Package / Case :

NI-360

Packaging :

Waffle

Pd - Power Dissipation :

140 W

Technology :

GaN-on-SiC

Transistor Polarity :

N-Channel

Transistor Type :

HEMT

Vds - Drain-Source Breakdown Voltage :

50 V

Vgs - Gate-Source Breakdown Voltage :

- 2.8 V