Product overview

Part Number
TGF2929-HM
Manufacturer
Qorvo
Product Category
RF JFET Transistors
Description
RF JFET Transistors DC-3.5GHz 100W 28V Gain 17.4dB GaN

Documents & Media

Datasheets
TGF2929-HM

Product Attributes

Gain :
17.4 dB
Id - Continuous Drain Current :
7.2 A
Maximum Operating Temperature :
+ 85 C
Minimum Operating Temperature :
- 40 C
Mounting Style :
SMD/SMT
Operating Frequency :
DC to 3.5 GHz
Output Power :
132 W
Package / Case :
NI-360
Packaging :
Waffle
Pd - Power Dissipation :
140 W
Technology :
GaN-on-SiC
Transistor Polarity :
N-Channel
Transistor Type :
HEMT
Vds - Drain-Source Breakdown Voltage :
50 V
Vgs - Gate-Source Breakdown Voltage :
- 2.8 V

Description

RF JFET Transistors DC-3.5GHz 100W 28V Gain 17.4dB GaN

Price & Procurement

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