Product overview

Part Number
NPT1012B
Manufacturer
MACOM
Product Category
RF JFET Transistors
Description
RF JFET Transistors DC-4.0GHz P1dB 43dBm Gain 13dB GaN

Documents & Media

Datasheets
NPT1012B

Product Attributes

Gain :
13 dB
Id - Continuous Drain Current :
4 mA
Maximum Operating Temperature :
+ 200 C
Mounting Style :
Screw Mount
Operating Frequency :
4 GHz
Packaging :
Tray
Pd - Power Dissipation :
44 W
Technology :
GaN-on-Si
Transistor Polarity :
N-Channel
Transistor Type :
HEMT
Vds - Drain-Source Breakdown Voltage :
100 V
Vgs - Gate-Source Breakdown Voltage :
3 V

Description

RF JFET Transistors DC-4.0GHz P1dB 43dBm Gain 13dB GaN

Price & Procurement

Associated Product

  • Kyocera AVX
    Automotive Connectors 26AWG/0.13sqmm Branch connector
  • TE Connectivity
    Automotive Connectors CONN. 2W MALE NOW
  • TE Connectivity
    Automotive Connectors HEEE-064-M HEAVYDUTY RECT SIBAS
  • TE Connectivity
    Automotive Connectors 20P PLUG ASSEMBLY UNSEALD HYBRID B-KEY
  • TE Connectivity / DEUTSCH
    Automotive Connectors WIRE ROUTER
  • TE Connectivity
    Automotive Connectors 025 10P CAP ASSY V-TYPE
  • Amphenol FCI
    Automotive Connectors Minitek MicroSpaceXS,1.27mm Crimp-to-Wire Connector Platform, Wire to Board Header, 3 Position., STG, Top Latch, Gold, WaterProof
  • TE Connectivity
    Automotive Connectors SEAL MATTE AIRBAG SDM GET
  • rayson
    emmc 4GB
  • rayson
    emmc 8GB