Product overview
- Part Number
- CG2H80060D-GP4
- Manufacturer
- Wolfspeed / Cree
- Product Category
- RF JFET Transistors
- Description
- RF JFET Transistors GaN HEMT Die DC-8.0GHz, 60 Watt
Documents & Media
- Datasheets
- CG2H80060D-GP4
Product Attributes
- Gain :
- 15 dB
- Id - Continuous Drain Current :
- 6 A
- Maximum Drain Gate Voltage :
- -
- Maximum Operating Temperature :
- + 225 C
- Mounting Style :
- SMD/SMT
- Operating Frequency :
- DC to 8 GHz
- Output Power :
- 60 W
- Package / Case :
- Die
- Packaging :
- Gel Pack
- Pd - Power Dissipation :
- -
- Technology :
- GaN
- Transistor Polarity :
- N-Channel
- Transistor Type :
- HEMT
- Vds - Drain-Source Breakdown Voltage :
- 120 V
- Vgs - Gate-Source Breakdown Voltage :
- - 10 V, 2 V
Description
RF JFET Transistors GaN HEMT Die DC-8.0GHz, 60 Watt
Price & Procurement
Associated Product
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Amphenol FCIAutomotive Connectors Minitek MicroSpaceXS,1.27mm Crimp-to-Wire Connector Platform, Wire to Board Header, 3 Position., STG, Top Latch, Gold, WaterProof
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