Product overview
- Part Number
- NPT2022
- Manufacturer
- MACOM
- Product Category
- RF JFET Transistors
- Description
- RF JFET Transistors DC-2.0GHz 100W Gain 20dB GaN HEMT
Documents & Media
- Datasheets
- NPT2022
Product Attributes
- Gain :
- 21 dB
- Id - Continuous Drain Current :
- 24 mA
- Maximum Operating Temperature :
- + 85 C
- Minimum Operating Temperature :
- - 40 C
- Mounting Style :
- Screw Mount
- Operating Frequency :
- 2 GHz
- Output Power :
- 100 W
- Packaging :
- Tray
- Technology :
- GaN-on-Si
- Transistor Polarity :
- N-Channel
- Transistor Type :
- HEMT
- Vds - Drain-Source Breakdown Voltage :
- 160 V
- Vgs - Gate-Source Breakdown Voltage :
- 3 V
Description
RF JFET Transistors DC-2.0GHz 100W Gain 20dB GaN HEMT
Price & Procurement
Associated Product
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Amphenol FCIAutomotive Connectors Minitek MicroSpaceXS,1.27mm Crimp-to-Wire Connector Platform, Wire to Board Header, 3 Position., STG, Top Latch, Gold, WaterProof
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