Product overview

Part Number
CGHV1F006S
Manufacturer
Wolfspeed / Cree
Product Category
RF JFET Transistors
Description
RF JFET Transistors GaN HEMT DC-18GHz, 6 Watt

Documents & Media

Datasheets
CGHV1F006S

Product Attributes

Gain :
16 dB
Id - Continuous Drain Current :
950 mA
Maximum Drain Gate Voltage :
-
Maximum Operating Temperature :
+ 150 C
Minimum Operating Temperature :
- 40 C
Mounting Style :
SMD/SMT
Operating Frequency :
18 GHz
Output Power :
6 W
Package / Case :
DFN-12
Packaging :
Cut Tape, MouseReel, Reel
Pd - Power Dissipation :
-
Technology :
GaN
Transistor Polarity :
N-Channel
Transistor Type :
HEMT
Vds - Drain-Source Breakdown Voltage :
100 V
Vgs - Gate-Source Breakdown Voltage :
- 10 V to 2 V

Description

RF JFET Transistors GaN HEMT DC-18GHz, 6 Watt

Price & Procurement

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