Product overview

Part Number
CG2H40010F
Manufacturer
Wolfspeed / Cree
Product Category
RF JFET Transistors
Description
RF JFET Transistors GaN HEMT DC-8.0GHz, 10 Watt

Documents & Media

Datasheets
CG2H40010F

Product Attributes

Gain :
16.5 dB
Id - Continuous Drain Current :
1.5 A
Maximum Drain Gate Voltage :
-
Maximum Operating Temperature :
+ 150 C
Minimum Operating Temperature :
- 40 C
Mounting Style :
Screw Mount
Operating Frequency :
DC to 6 GHz
Output Power :
10 W
Package / Case :
440166
Packaging :
Tray
Pd - Power Dissipation :
-
Technology :
GaN
Transistor Polarity :
N-Channel
Transistor Type :
HEMT
Vds - Drain-Source Breakdown Voltage :
120 V
Vgs - Gate-Source Breakdown Voltage :
- 10 V, 2 V

Description

RF JFET Transistors GaN HEMT DC-8.0GHz, 10 Watt

Price & Procurement

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