Datasheets

QPD1025L

Gain :

22.9 dB

Id - Continuous Drain Current :

28 A

Maximum Drain Gate Voltage :

225 V

Maximum Operating Temperature :

+ 85 C

Minimum Operating Temperature :

- 40 C

Mounting Style :

SMD/SMT

Operating Frequency :

1 GHz to 1.1 GHz

Output Power :

1.5 kW

Package / Case :

NI-1230-4

Packaging :

Tray

Pd - Power Dissipation :

758 W

Technology :

GaN-on-SiC

Transistor Type :

HEMT