Product overview
- Part Number
- QPD1006
- Manufacturer
- Qorvo
- Product Category
- RF JFET Transistors
- Description
- RF JFET Transistors 450W 50V 1.2-1.4GHz GaN IMFET
Documents & Media
- Datasheets
- QPD1006
Product Attributes
- Gain :
- 17.8 dB
- Id - Continuous Drain Current :
- 14 A
- Maximum Drain Gate Voltage :
- 145 V
- Maximum Operating Temperature :
- + 85 C
- Minimum Operating Temperature :
- - 40 C
- Mounting Style :
- SMD/SMT
- Operating Frequency :
- 1.2 GHz to 1.4 GHz
- Output Power :
- 450 W
- Package / Case :
- NI-50CW
- Pd - Power Dissipation :
- 445 W
- Technology :
- GaN-on-SiC
- Transistor Polarity :
- N-Channel
- Transistor Type :
- HEMT
Description
RF JFET Transistors 450W 50V 1.2-1.4GHz GaN IMFET
Price & Procurement
Associated Product
-
-
-
-
-
-
-
Amphenol FCIAutomotive Connectors Minitek MicroSpaceXS,1.27mm Crimp-to-Wire Connector Platform, Wire to Board Header, 3 Position., STG, Top Latch, Gold, WaterProof
-
-
-
