Product overview
- Part Number
- BFP 640 H6327
- Manufacturer
- Infineon Technologies
- Product Category
- RF Bipolar Transistors
- Description
- RF Bipolar Transistors RF BIP TRANSISTOR
Documents & Media
- Datasheets
- BFP 640 H6327
Product Attributes
- Collector- Emitter Voltage VCEO Max :
- 4 V
- Configuration :
- Single
- Continuous Collector Current :
- 50 mA
- DC Collector/Base Gain hfe Min :
- 110
- Emitter- Base Voltage VEBO :
- 1.2 V
- Maximum Operating Temperature :
- + 150 C
- Minimum Operating Temperature :
- - 65 C
- Mounting Style :
- SMD/SMT
- Operating Frequency :
- 40 GHz
- Package / Case :
- SOT-343
- Packaging :
- Cut Tape, MouseReel, Reel
- Series :
- BFP640
- Technology :
- SiGe
- Transistor Polarity :
- NPN
- Transistor Type :
- Bipolar
Description
RF Bipolar Transistors RF BIP TRANSISTOR
Price & Procurement
Associated Product
-
-
-
-
-
-
-
Amphenol FCIAutomotive Connectors Minitek MicroSpaceXS,1.27mm Crimp-to-Wire Connector Platform, Wire to Board Header, 3 Position., STG, Top Latch, Gold, WaterProof
-
-
-
You May Also Be Interested In
RT0402DRE07750RL
RT0402DRE07249RL
RT0402DRE0712K4L
RT0603DRD0754R9L
RT0603DRD07383RL
RT0603DRD078K45L
AT0603FRE075K62L
RT0402DRE0760R4L
AT0603FRD0720KL
RT0402DRE0729K1L
RT0603DRD071K15L
RT0603DRD07442RL
RT0402DRE072K1L
RT0603DRD07576RL
RT0603DRD07267KL
AT0603FRE0715RL
RT0402DRE07374RL
RT0402DRE0716K2L
RT0402DRE079K53L
RT0603DRD0751R1L