Product overview

Part Number
MT3S113(TE85L,F)
Manufacturer
Toshiba
Product Category
RF Bipolar Transistors
Description
RF Bipolar Transistors RF Bipolar Transistor .1A 800mW

Documents & Media

Datasheets
MT3S113(TE85L,F)

Product Attributes

Collector- Emitter Voltage VCEO Max :
5.3 V
Configuration :
Single
Continuous Collector Current :
100 mA
DC Collector/Base Gain hfe Min :
200
Emitter- Base Voltage VEBO :
0.6 V
Maximum Operating Temperature :
+ 150 C
Mounting Style :
SMD/SMT
Operating Frequency :
12.5 GHz
Package / Case :
TO-236-3
Packaging :
Cut Tape, Reel
Series :
MT3S113
Technology :
SiGe
Transistor Polarity :
NPN
Transistor Type :
Bipolar

Description

RF Bipolar Transistors RF Bipolar Transistor .1A 800mW

Price & Procurement

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