Product overview

Part Number
TSM4NB60CH X0G
Manufacturer
Taiwan Semiconductor
Product Category
MOSFET
Description
MOSFET 600V 4A Single N-Cha nnel Power MOSFET

Documents & Media

Datasheets
TSM4NB60CH X0G

Product Attributes

Channel Mode :
Enhancement
Id - Continuous Drain Current :
4 A
Maximum Operating Temperature :
+ 150 C
Minimum Operating Temperature :
- 55 C
Mounting Style :
Through Hole
Number of Channels :
1 Channel
Package / Case :
TO-251S-3
Packaging :
Tube
Pd - Power Dissipation :
50 W
Qg - Gate Charge :
14.5 nC
Rds On - Drain-Source Resistance :
2.5 Ohms
Technology :
SI
Transistor Polarity :
N-Channel
Vds - Drain-Source Breakdown Voltage :
600 V
Vgs - Gate-Source Voltage :
- 30 V, + 30 V
Vgs th - Gate-Source Threshold Voltage :
2.5 V

Description

MOSFET 600V 4A Single N-Cha nnel Power MOSFET

Price & Procurement

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