Product overview
- Part Number
- TSM4ND65CI C0G
- Manufacturer
- Taiwan Semiconductor
- Product Category
- MOSFET
- Description
- MOSFET 650V 4A Single N-Cha nnel Power MOSFET
Documents & Media
- Datasheets
- TSM4ND65CI C0G
Product Attributes
- Channel Mode :
- Enhancement
- Id - Continuous Drain Current :
- 4 A
- Maximum Operating Temperature :
- + 150 C
- Minimum Operating Temperature :
- - 55 C
- Mounting Style :
- Through Hole
- Number of Channels :
- 1 Channel
- Package / Case :
- ITO-220-3
- Packaging :
- Tube
- Pd - Power Dissipation :
- 41.6 W
- Qg - Gate Charge :
- 16.8 nC
- Rds On - Drain-Source Resistance :
- 2.6 Ohms
- Technology :
- SI
- Transistor Polarity :
- N-Channel
- Vds - Drain-Source Breakdown Voltage :
- 650 V
- Vgs - Gate-Source Voltage :
- - 30 V, + 30 V
- Vgs th - Gate-Source Threshold Voltage :
- 2.5 V
Description
MOSFET 650V 4A Single N-Cha nnel Power MOSFET
Price & Procurement
Associated Product
-
-
-
-
-
-
-
-
Amphenol FCIAutomotive Connectors Minitek MicroSpaceXS,1.27mm Crimp-to-Wire Connector Platform, Wire to Board Header, 3 Position., STG, Top Latch, Gold, WaterProof
-
-
You May Also Be Interested In
D38999/24FD5PN-LC
D38999/20WB98SC-LC
MS27466T9B35A
D38999/26WC35HA
D38999/20FE6BA
D38999/20WC98AA
D38999/24FH35PN-LC
D38999/24WC8BA
D38999/26WD97AN
MS27473T14F18S-LC
D38999/20FE26BA
D38999/24WD35SB-LC
D38999/26FD5PN-LC
MS27473T16B6P-LC
D38999/20FF11SN-LC
D38999/26WH35SB-LC
D38999/20WH35SB-LC
D38999/26FD97SN-LC
D38999/20FD97AN
D38999/20FD97PN-LC