Product overview

Part Number
SIHD6N65ET5-GE3
Manufacturer
Vishay / Siliconix
Product Category
MOSFET
Description
MOSFET 650V Vds E Series DPAK TO-252

Documents & Media

Datasheets
SIHD6N65ET5-GE3

Product Attributes

Id - Continuous Drain Current :
7 A
Maximum Operating Temperature :
+ 150 C
Minimum Operating Temperature :
- 55 C
Mounting Style :
SMD/SMT
Number of Channels :
1 Channel
Package / Case :
TO-252-3
Packaging :
Reel
Pd - Power Dissipation :
78 W
Qg - Gate Charge :
24 nC
Rds On - Drain-Source Resistance :
500 mOhms
Technology :
SI
Transistor Polarity :
N-Channel
Vds - Drain-Source Breakdown Voltage :
650 V
Vgs - Gate-Source Voltage :
- 30 V, + 30 V
Vgs th - Gate-Source Threshold Voltage :
4 V

Description

MOSFET 650V Vds E Series DPAK TO-252

Price & Procurement

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