Datasheets

SI7686DP-T1-GE3

Channel Mode :

Enhancement

Id - Continuous Drain Current :

35 A

Maximum Operating Temperature :

+ 150 C

Minimum Operating Temperature :

- 50 C

Mounting Style :

SMD/SMT

Number of Channels :

1 Channel

Package / Case :

PowerPAK-SO-8

Packaging :

Reel

Pd - Power Dissipation :

37.9 W

Qg - Gate Charge :

26 nC

Rds On - Drain-Source Resistance :

9.5 mOhms

Technology :

SI

Tradename :

TrenchFET

Transistor Polarity :

N-Channel

Vds - Drain-Source Breakdown Voltage :

30 V

Vgs - Gate-Source Voltage :

- 20 V, + 20 V

Vgs th - Gate-Source Threshold Voltage :

1 V