Product overview

Part Number
IPD90R1K2C3ATMA2
Manufacturer
Infineon Technologies
Product Category
MOSFET
Description
MOSFET LOW POWER_LEGACY

Documents & Media

Datasheets
IPD90R1K2C3ATMA2

Product Attributes

Channel Mode :
Enhancement
Id - Continuous Drain Current :
5.1 A
Maximum Operating Temperature :
+ 150 C
Minimum Operating Temperature :
- 55 C
Mounting Style :
SMD/SMT
Number of Channels :
1 Channel
Package / Case :
TO-252-3
Packaging :
Reel
Pd - Power Dissipation :
83 W
Qg - Gate Charge :
28 nC
Rds On - Drain-Source Resistance :
1.2 Ohms
Technology :
SI
Transistor Polarity :
N-Channel
Vds - Drain-Source Breakdown Voltage :
900 V
Vgs - Gate-Source Voltage :
- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage :
3 V

Description

MOSFET LOW POWER_LEGACY

Price & Procurement

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