Product overview

Part Number
SSM6N813R,LXHF
Manufacturer
Toshiba
Product Category
MOSFET
Description
MOSFET AUTO AEC-Q SS MOS Dual N-ch Low drain-source on-resistance VDSS:100V ID:3.5A PD:1.5W TSOP6F

Documents & Media

Datasheets
SSM6N813R,LXHF

Product Attributes

Channel Mode :
Enhancement
Id - Continuous Drain Current :
3.5 A
Maximum Operating Temperature :
+ 175 C
Mounting Style :
SMD/SMT
Number of Channels :
2 Channel
Package / Case :
TSOP6F
Packaging :
Reel
Pd - Power Dissipation :
1.5 W
Qg - Gate Charge :
3.6 nC
Qualification :
AEC-Q200
Rds On - Drain-Source Resistance :
88 mOhms
Technology :
SI
Transistor Polarity :
N-Channel
Vds - Drain-Source Breakdown Voltage :
100 V
Vgs - Gate-Source Voltage :
- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage :
2.5 V

Description

MOSFET AUTO AEC-Q SS MOS Dual N-ch Low drain-source on-resistance VDSS:100V ID:3.5A PD:1.5W TSOP6F

Price & Procurement

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