Product overview
- Part Number
- GS66506T-TR
- Manufacturer
- GaN Systems
- Product Category
- MOSFET
- Description
- MOSFET 650V, 22A, GaN E-mode, GaNPX package, Top-side cooled
Documents & Media
- Datasheets
- GS66506T-TR
Product Attributes
- Channel Mode :
- Enhancement
- Id - Continuous Drain Current :
- 22.5 A
- Maximum Operating Temperature :
- + 150 C
- Minimum Operating Temperature :
- - 55 C
- Mounting Style :
- SMD/SMT
- Number of Channels :
- 1 Channel
- Packaging :
- Reel
- Qg - Gate Charge :
- 4.5 nC
- Rds On - Drain-Source Resistance :
- 90 mOhms
- Technology :
- GaN
- Tradename :
- GaNPX
- Transistor Polarity :
- N-Channel
- Vds - Drain-Source Breakdown Voltage :
- 650 V
- Vgs - Gate-Source Voltage :
- - 10 V, + 7 V
- Vgs th - Gate-Source Threshold Voltage :
- 2.6 V
Description
MOSFET 650V, 22A, GaN E-mode, GaNPX package, Top-side cooled
Price & Procurement
Associated Product
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Amphenol FCIAutomotive Connectors Minitek MicroSpaceXS,1.27mm Crimp-to-Wire Connector Platform, Wire to Board Header, 3 Position., STG, Top Latch, Gold, WaterProof
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