Product overview
- Part Number
- SCTH60N120G2-7
- Manufacturer
- STMicroelectronics
- Product Category
- MOSFET
- Description
- MOSFET Silicon carbide Power MOSFET 1200 V, 35 mOhm typ., 60 A in an H2PAK-7 package
Documents & Media
- Datasheets
- SCTH60N120G2-7
Product Attributes
- Channel Mode :
- Enhancement
- Id - Continuous Drain Current :
- 60 A
- Maximum Operating Temperature :
- + 175 C
- Minimum Operating Temperature :
- - 55 C
- Mounting Style :
- SMD/SMT
- Number of Channels :
- 1 Channel
- Package / Case :
- H2PAK-7
- Packaging :
- Reel
- Pd - Power Dissipation :
- 390 W
- Qg - Gate Charge :
- 94 nC
- Rds On - Drain-Source Resistance :
- 52 mOhms
- Technology :
- SiC
- Vds - Drain-Source Breakdown Voltage :
- 1.2 kV
- Vgs th - Gate-Source Threshold Voltage :
- 3 V
Description
MOSFET Silicon carbide Power MOSFET 1200 V, 35 mOhm typ., 60 A in an H2PAK-7 package
Price & Procurement
Associated Product
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Amphenol FCIAutomotive Connectors Minitek MicroSpaceXS,1.27mm Crimp-to-Wire Connector Platform, Wire to Board Header, 3 Position., STG, Top Latch, Gold, WaterProof
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