Product overview
- Part Number
- DMG6301UDW-13
- Manufacturer
- Diodes Incorporated
- Product Category
- MOSFET
- Description
- MOSFET 25V Dual N-Ch Enh 8Vgss .24A 0.3W
Documents & Media
- Datasheets
- DMG6301UDW-13
Product Attributes
- Channel Mode :
- Enhancement
- Id - Continuous Drain Current :
- 240 mA
- Maximum Operating Temperature :
- + 150 C
- Minimum Operating Temperature :
- - 55 C
- Mounting Style :
- SMD/SMT
- Number of Channels :
- 2 Channel
- Package / Case :
- SOT-363-6
- Packaging :
- Reel
- Pd - Power Dissipation :
- 370 mW
- Qg - Gate Charge :
- 360 pC
- Rds On - Drain-Source Resistance :
- 3.8 Ohms
- Technology :
- SI
- Tradename :
- PowerDI
- Transistor Polarity :
- N-Channel
- Vds - Drain-Source Breakdown Voltage :
- 25 V
- Vgs - Gate-Source Voltage :
- - 8 V, + 8 V
- Vgs th - Gate-Source Threshold Voltage :
- 850 mV
Description
MOSFET 25V Dual N-Ch Enh 8Vgss .24A 0.3W
Price & Procurement
Associated Product
-
-
-
-
-
-
-
-
Amphenol FCIAutomotive Connectors Minitek MicroSpaceXS,1.27mm Crimp-to-Wire Connector Platform, Wire to Board Header, 3 Position., STG, Top Latch, Gold, WaterProof
-
-
You May Also Be Interested In
RG2012N-4531-B-T5
RG2012N-9761-B-T5
RG2012N-2322-B-T5
RG2012N-162-B-T5
RG1005V-1270-B-T1
RG2012N-1653-B-T5
RG2012N-4533-B-T5
RG1005V-2051-B-T1
RG2012N-3743-B-T5
RG2012N-1741-B-T5
RG2012N-84R5-B-T5
RG2012N-8250-B-T5
RG2012N-82R5-B-T5
RG2012N-820-B-T5
RG2012N-2153-B-T5
RG2012N-3831-B-T5
RG2012N-2052-B-T5
RG2012N-113-B-T5
RG2012N-9312-B-T5
RG2012N-2261-B-T5