Datasheets

IXFQ60N50P3

Id - Continuous Drain Current :

60 A

Mounting Style :

Through Hole

Number of Channels :

1 Channel

Package / Case :

TO-3P-3

Packaging :

Tube

Pd - Power Dissipation :

1.04 mW

Qg - Gate Charge :

96 nC

Rds On - Drain-Source Resistance :

100 mOhms

Technology :

SI

Tradename :

HiPerFET

Transistor Polarity :

N-Channel

Vds - Drain-Source Breakdown Voltage :

500 V

Vgs - Gate-Source Voltage :

- 30 V, + 30 V

Vgs th - Gate-Source Threshold Voltage :

5 V