Product overview
- Part Number
- TSM60NB190CM2 RNG
- Manufacturer
- Taiwan Semiconductor
- Product Category
- MOSFET
- Description
- MOSFET 600V, 18A, Single N-Channel Power MOSFET
Documents & Media
- Datasheets
- TSM60NB190CM2 RNG
Product Attributes
- Channel Mode :
- Enhancement
- Id - Continuous Drain Current :
- 18 A
- Maximum Operating Temperature :
- + 150 C
- Minimum Operating Temperature :
- - 55 C
- Mounting Style :
- SMD/SMT
- Number of Channels :
- 1 Channel
- Package / Case :
- TO-263-3
- Packaging :
- Cut Tape, Reel
- Pd - Power Dissipation :
- 150.6 W
- Qg - Gate Charge :
- 31 nC
- Rds On - Drain-Source Resistance :
- 170 mOhms
- Technology :
- SI
- Transistor Polarity :
- N-Channel
- Vds - Drain-Source Breakdown Voltage :
- 600 V
- Vgs - Gate-Source Voltage :
- - 30 V, + 30 V
- Vgs th - Gate-Source Threshold Voltage :
- 2 V
Description
MOSFET 600V, 18A, Single N-Channel Power MOSFET
Price & Procurement
Associated Product
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Amphenol FCIAutomotive Connectors Minitek MicroSpaceXS,1.27mm Crimp-to-Wire Connector Platform, Wire to Board Header, 3 Position., STG, Top Latch, Gold, WaterProof
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