Product overview

Part Number
TK49N65W,S1F(S
Manufacturer
Toshiba
Product Category
MOSFET
Description
MOSFET Power MOSFET 49.2A 400W 650V

Documents & Media

Datasheets
TK49N65W,S1F(S

Product Attributes

Channel Mode :
Enhancement
Id - Continuous Drain Current :
49.2 A
Maximum Operating Temperature :
+ 150 C
Mounting Style :
Through Hole
Number of Channels :
1 Channel
Package / Case :
TO-247-3
Packaging :
Tube
Pd - Power Dissipation :
400 W
Qg - Gate Charge :
160 nC
Rds On - Drain-Source Resistance :
55 mOhms
Technology :
SI
Tradename :
DTMOSIV
Transistor Polarity :
N-Channel
Vds - Drain-Source Breakdown Voltage :
650 V
Vgs - Gate-Source Voltage :
- 30 V, + 30 V
Vgs th - Gate-Source Threshold Voltage :
2.5 V

Description

MOSFET Power MOSFET 49.2A 400W 650V

Price & Procurement

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