Product overview

Part Number
SCTW60N120G2
Manufacturer
STMicroelectronics
Product Category
MOSFET
Description
MOSFET Silicon carbide Power MOSFET 1200 V, 35 mOhm typ., 60 A in an HiP247 package

Documents & Media

Datasheets
SCTW60N120G2

Product Attributes

Channel Mode :
Enhancement
Id - Continuous Drain Current :
60 A
Maximum Operating Temperature :
+ 200 C
Minimum Operating Temperature :
- 55 C
Mounting Style :
Through Hole
Number of Channels :
1 Channel
Package / Case :
HIP247-3
Packaging :
Tube
Pd - Power Dissipation :
389 W
Qg - Gate Charge :
94 nC
Rds On - Drain-Source Resistance :
52 mOhms
Technology :
SI
Vds - Drain-Source Breakdown Voltage :
1.2 kV
Vgs th - Gate-Source Threshold Voltage :
5 V

Description

MOSFET Silicon carbide Power MOSFET 1200 V, 35 mOhm typ., 60 A in an HiP247 package

Price & Procurement

Associated Product

  • Kyocera AVX
    Automotive Connectors 26AWG/0.13sqmm Branch connector
  • TE Connectivity
    Automotive Connectors CONN. 2W MALE NOW
  • TE Connectivity
    Automotive Connectors HEEE-064-M HEAVYDUTY RECT SIBAS
  • TE Connectivity
    Automotive Connectors 20P PLUG ASSEMBLY UNSEALD HYBRID B-KEY
  • TE Connectivity / DEUTSCH
    Automotive Connectors WIRE ROUTER
  • TE Connectivity
    Automotive Connectors 025 10P CAP ASSY V-TYPE
  • Amphenol FCI
    Automotive Connectors Minitek MicroSpaceXS,1.27mm Crimp-to-Wire Connector Platform, Wire to Board Header, 3 Position., STG, Top Latch, Gold, WaterProof
  • TE Connectivity
    Automotive Connectors SEAL MATTE AIRBAG SDM GET
  • rayson
    emmc 4GB
  • rayson
    emmc 8GB