Datasheets

SSM3K2615TU,LF

Channel Mode :

Enhancement

Id - Continuous Drain Current :

2 A

Maximum Operating Temperature :

+ 150 C

Mounting Style :

SMD/SMT

Number of Channels :

1 Channel

Package / Case :

UFM-3

Packaging :

Cut Tape, Reel

Pd - Power Dissipation :

1.6 W

Qg - Gate Charge :

6 nC

Qualification :

AEC-Q101

Rds On - Drain-Source Resistance :

300 mOhms

Technology :

SI

Tradename :

MOSV

Transistor Polarity :

N-Channel

Vds - Drain-Source Breakdown Voltage :

60 V

Vgs - Gate-Source Voltage :

- 20 V, + 20 V

Vgs th - Gate-Source Threshold Voltage :

800 mV