Datasheets

IXFT18N100Q3

Id - Continuous Drain Current :

18 A

Maximum Operating Temperature :

+ 150 C

Mounting Style :

SMD/SMT

Number of Channels :

1 Channel

Package / Case :

TO-268-3

Packaging :

Tube

Pd - Power Dissipation :

830 W

Qg - Gate Charge :

90 nC

Rds On - Drain-Source Resistance :

660 mOhms

Technology :

SI

Tradename :

HiPerFET

Transistor Polarity :

N-Channel

Vds - Drain-Source Breakdown Voltage :

1 kV

Vgs - Gate-Source Voltage :

- 30 V, + 30 V