Datasheets

IXFT150N25X3HV

Channel Mode :

Enhancement

Id - Continuous Drain Current :

150 A

Mounting Style :

Through Hole

Number of Channels :

1 Channel

Package / Case :

TO-268HV-3

Packaging :

Tube

Pd - Power Dissipation :

735 W

Qg - Gate Charge :

154 nC

Rds On - Drain-Source Resistance :

9 mOhms

Technology :

SI

Tradename :

HiPerFET

Transistor Polarity :

N-Channel

Vds - Drain-Source Breakdown Voltage :

250 V

Vgs - Gate-Source Voltage :

- 10 V, + 10 V

Vgs th - Gate-Source Threshold Voltage :

2.5 V