Datasheets

IXFX32N80Q3

Id - Continuous Drain Current :

32 A

Maximum Operating Temperature :

+ 150 C

Mounting Style :

Through Hole

Number of Channels :

1 Channel

Package / Case :

TO-247-3

Packaging :

Tube

Pd - Power Dissipation :

1 kW

Qg - Gate Charge :

140 nC

Rds On - Drain-Source Resistance :

270 mOhms

Technology :

SI

Tradename :

HiPerFET

Transistor Polarity :

N-Channel

Vds - Drain-Source Breakdown Voltage :

800 V

Vgs - Gate-Source Voltage :

- 30 V, + 30 V