Product overview
- Part Number
- SIHP18N50C-E3
- Manufacturer
- Vishay Semiconductors
- Product Category
- MOSFET
- Description
- MOSFET 500V Vds 30V Vgs TO-220AB
Documents & Media
- Datasheets
- SIHP18N50C-E3
Product Attributes
- Channel Mode :
- Enhancement
- Id - Continuous Drain Current :
- 18 A
- Maximum Operating Temperature :
- + 150 C
- Minimum Operating Temperature :
- - 55 C
- Mounting Style :
- Through Hole
- Number of Channels :
- 1 Channel
- Package / Case :
- TO-220-3
- Packaging :
- Tube
- Pd - Power Dissipation :
- 223 W
- Qg - Gate Charge :
- 65 nC
- Rds On - Drain-Source Resistance :
- 225 mOhms
- Technology :
- SI
- Transistor Polarity :
- N-Channel
- Vds - Drain-Source Breakdown Voltage :
- 500 V
- Vgs - Gate-Source Voltage :
- - 30 V, + 30 V
- Vgs th - Gate-Source Threshold Voltage :
- 5 V
Description
MOSFET 500V Vds 30V Vgs TO-220AB
Price & Procurement
Associated Product
-
-
-
-
-
-
-
-
Amphenol FCIAutomotive Connectors Minitek MicroSpaceXS,1.27mm Crimp-to-Wire Connector Platform, Wire to Board Header, 3 Position., STG, Top Latch, Gold, WaterProof
-
-
You May Also Be Interested In
TCSD-18-D-18.00-01-F-R
IDMD-20-T-07.90
IDSD-18-D-13.00
HCMD-14-T-20.00-02-T-N
TCSD-08-S-39.37-01-F
FFSD-20-S-25.00-01-N
TCMD-05-T-02.01-01
FFMD-10-D-24.00-01
HCMD-12-D-03.50-02-S-R
HCMS-20-D-12.00-01
TCSD-20-D-03.80-01-F-N
FFSD-10-D-05.00-01-N-R
FFSD-10-S-36.00-01-N-RW
HCSD-12-D-20.00-01-N-G
TCMD-08-S-50.00-01
IDMD-20-T-08.00
HCSD-20-S-06.00-01-N-ST8
FFSD-10-D-04.99-01-N-R
HCMD-15-T-03.30-02-N-R-RW
IDMD-22-T-02.00-C-G