Product overview
- Part Number
- R6509END3TL1
- Manufacturer
- ROHM Semiconductor
- Product Category
- MOSFET
- Description
- MOSFET 650V MOSFET
Documents & Media
- Datasheets
- R6509END3TL1
Product Attributes
- Channel Mode :
- Enhancement
- Id - Continuous Drain Current :
- 9 A
- Maximum Operating Temperature :
- + 150 C
- Minimum Operating Temperature :
- - 55 C
- Mounting Style :
- SMD/SMT
- Number of Channels :
- 1 Channel
- Package / Case :
- TO-252-3
- Packaging :
- Cut Tape, Reel
- Pd - Power Dissipation :
- 94 W
- Qg - Gate Charge :
- 24 nC
- Rds On - Drain-Source Resistance :
- 585 mOhms
- Technology :
- SI
- Transistor Polarity :
- N-Channel
- Vds - Drain-Source Breakdown Voltage :
- 650 V
- Vgs - Gate-Source Voltage :
- - 20 V, + 20 V
- Vgs th - Gate-Source Threshold Voltage :
- 4 V
Description
MOSFET 650V MOSFET
Price & Procurement
Associated Product
-
-
-
-
-
-
-
Amphenol FCIAutomotive Connectors Minitek MicroSpaceXS,1.27mm Crimp-to-Wire Connector Platform, Wire to Board Header, 3 Position., STG, Top Latch, Gold, WaterProof
-
-
-
You May Also Be Interested In
CES-127-02-T-S
MTSW-108-10-S-D-510
TSW-116-10-S-S-RE
TSW-108-10-S-D-RA
TSW-128-17-L-S
MTSW-108-10-S-D-485
MTSW-108-10-S-D-555
TSW-116-10-S-S-RA
ZSS-103-05-L-D-915
MTSW-113-09-L-D-440-LL
HTSW-110-14-G-T
ZST-117-07-T-D-515
MTLW-136-06-T-S-150
MTSW-108-10-S-D-640
MTMM-115-08-T-D-290
TSW-115-15-L-D
HTSW-114-05-L-D
MTSW-108-10-S-D-630
TSW-115-16-L-D
MTSW-117-09-S-S-440