Product overview
- Part Number
- SCTW40N120G2VAG
- Manufacturer
- STMicroelectronics
- Product Category
- MOSFET
- Description
- MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 33 A, 75 mOhm
Documents & Media
- Datasheets
- SCTW40N120G2VAG
Product Attributes
- Channel Mode :
- Enhancement
- Id - Continuous Drain Current :
- 36 A
- Maximum Operating Temperature :
- + 200 C
- Minimum Operating Temperature :
- - 55 C
- Mounting Style :
- Through Hole
- Number of Channels :
- 1 Channel
- Package / Case :
- HiP-247-3
- Packaging :
- Tube
- Pd - Power Dissipation :
- 278 W
- Qg - Gate Charge :
- 61 nC
- Qualification :
- AEC-Q101
- Rds On - Drain-Source Resistance :
- 100 mOhms
- Technology :
- SiC
- Transistor Polarity :
- N-Channel
- Vds - Drain-Source Breakdown Voltage :
- 1.2 kV
- Vgs - Gate-Source Voltage :
- - 10 V, + 22 V
- Vgs th - Gate-Source Threshold Voltage :
- 4.9 V
Description
MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 33 A, 75 mOhm
Price & Procurement
Associated Product
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Amphenol FCIAutomotive Connectors Minitek MicroSpaceXS,1.27mm Crimp-to-Wire Connector Platform, Wire to Board Header, 3 Position., STG, Top Latch, Gold, WaterProof
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