Product overview
- Part Number
- SIR622DP-T1-GE3
- Manufacturer
- Vishay Semiconductors
- Product Category
- MOSFET
- Description
- MOSFET 150V Vds 20V Vgs PowerPAK SO-8
Documents & Media
- Datasheets
- SIR622DP-T1-GE3
Product Attributes
- Channel Mode :
- Enhancement
- Id - Continuous Drain Current :
- 51.6 A
- Maximum Operating Temperature :
- + 150 C
- Minimum Operating Temperature :
- - 55 C
- Mounting Style :
- SMD/SMT
- Number of Channels :
- 1 Channel
- Package / Case :
- PowerPAK-SO-8
- Packaging :
- Cut Tape, MouseReel, Reel
- Pd - Power Dissipation :
- 104 W
- Qg - Gate Charge :
- 27 nC
- Rds On - Drain-Source Resistance :
- 17.7 mOhms
- Technology :
- SI
- Tradename :
- ThunderFET, PowerPAK
- Transistor Polarity :
- N-Channel
- Vds - Drain-Source Breakdown Voltage :
- 150 V
- Vgs - Gate-Source Voltage :
- - 20 V, + 20 V
- Vgs th - Gate-Source Threshold Voltage :
- 2.5 V
Description
MOSFET 150V Vds 20V Vgs PowerPAK SO-8
Price & Procurement
Associated Product
-
-
-
-
-
-
-
Amphenol FCIAutomotive Connectors Minitek MicroSpaceXS,1.27mm Crimp-to-Wire Connector Platform, Wire to Board Header, 3 Position., STG, Top Latch, Gold, WaterProof
-
-
-
You May Also Be Interested In
RG3216P-1303-B-T1
RG3216P-1300-B-T1
RG3216P-2701-B-T1
PCF0603PR-750RBT1
RN731ETTP1622B25
RG2012N-2490-B-T5
RT1206BRD0775KL
RN732ATTD6981B25
RG2012N-334-D-T5
RG1608N-750-W-T1
RN732BTTD75R0B25
HRG3216Q-39R0-D-T1
RG2012N-273-W-T1
RG1608N-182-W-T1
RG2012N-750-W-T1
RG2012N-470-W-T1
RG2012N-272-W-T1
HRG3216P-2001-D-T1
HRG3216P-4702-D-T1
HRG3216P-1502-D-T1