Product overview
- Part Number
- DMN10H120SE-13
- Manufacturer
- Diodes Incorporated
- Product Category
- MOSFET
- Description
- MOSFET 100V N-Ch Enh FET 20Vgss 549pF 10nC
Documents & Media
- Datasheets
- DMN10H120SE-13
Product Attributes
- Channel Mode :
- Enhancement
- Id - Continuous Drain Current :
- 3.6 A
- Maximum Operating Temperature :
- + 150 C
- Minimum Operating Temperature :
- - 55 C
- Mounting Style :
- SMD/SMT
- Number of Channels :
- 1 Channel
- Package / Case :
- SOT-223-4
- Packaging :
- Cut Tape, MouseReel, Reel
- Pd - Power Dissipation :
- 2.1 W
- Qg - Gate Charge :
- 10 nC
- Rds On - Drain-Source Resistance :
- 110 mOhms
- Technology :
- SI
- Transistor Polarity :
- N-Channel
- Vds - Drain-Source Breakdown Voltage :
- 100 V
- Vgs - Gate-Source Voltage :
- - 20 V, + 20 V
- Vgs th - Gate-Source Threshold Voltage :
- 1.5 V
Description
MOSFET 100V N-Ch Enh FET 20Vgss 549pF 10nC
Price & Procurement
Associated Product
-
-
-
-
-
-
-
Amphenol FCIAutomotive Connectors Minitek MicroSpaceXS,1.27mm Crimp-to-Wire Connector Platform, Wire to Board Header, 3 Position., STG, Top Latch, Gold, WaterProof
-
-
-
You May Also Be Interested In
0201S104K250CT
RF03N1R8B250CT
RF03N7R5B500CT
1206B562K102CT
1210B103M101CT
RF03N1R5B250CT
CC1206JRNPOABN470
CC1206JRNPOBBN120
0805B151K102CT
RF18N4R7B500CT
0805B221K102CT
CQ0402BRNPO9BN4R7
0805B822K631CT
RF03N3R3B250CT
1206N4R7B201CT
0805N8R2B631CT
CC1206JRNPOBBN121
500R14N221JV4T
CC1206JRNPOABN330
0805B392K631CT