Product overview
- Part Number
- IPT020N10N3
- Manufacturer
- Infineon Technologies
- Product Category
- MOSFET
- Description
- MOSFET TRENCH >=100V
Documents & Media
- Datasheets
- IPT020N10N3
Product Attributes
- Channel Mode :
- Enhancement
- Id - Continuous Drain Current :
- 300 A
- Maximum Operating Temperature :
- + 175 C
- Minimum Operating Temperature :
- - 55 C
- Mounting Style :
- SMD/SMT
- Number of Channels :
- 1 Channel
- Package / Case :
- HSOF-8
- Packaging :
- Cut Tape, MouseReel, Reel
- Pd - Power Dissipation :
- 375 W
- Qg - Gate Charge :
- 156 nC
- Rds On - Drain-Source Resistance :
- 2 mOhms
- Technology :
- SI
- Tradename :
- OptiMOS
- Transistor Polarity :
- N-Channel
- Vds - Drain-Source Breakdown Voltage :
- 100 V
- Vgs - Gate-Source Voltage :
- - 20 V, + 20 V
- Vgs th - Gate-Source Threshold Voltage :
- 2 V
Description
MOSFET TRENCH >=100V
Price & Procurement
Associated Product
-
-
-
-
-
-
-
-
Amphenol FCIAutomotive Connectors Minitek MicroSpaceXS,1.27mm Crimp-to-Wire Connector Platform, Wire to Board Header, 3 Position., STG, Top Latch, Gold, WaterProof
-
-
You May Also Be Interested In
MLBAWT-A1-R250-000WDY
MLBAWT-A1-R250-000WDT
MLBAWT-A1-R250-000VF7
MLBAWT-A1-R250-000VF6
MLBAWT-A1-R250-000WA3
MLBAWT-P1-0000-000UE8
MLBAWT-A1-R250-000VF8
MLBAWT-A1-0000-000WF7
MLBAWT-P1-0000-000VE6
XHBAWT-00-0000-00000LX53
MLBAWT-A1-R250-000VE8
MLBAWT-P1-0000-000UF8
MLBAWT-P1-0000-000UE7
MLBAWT-A1-R250-000VF5
XHBAWT-00-0000-00000BX53
MLBAWT-A1-R250-000WA4
MLBAWT-A1-R250-000W50
XHBAWT-00-0000-00000HW53
MLBAWT-P1-0000-000UF7
MLBAWT-A1-R250-000VE6