Product overview
- Part Number
- IPP60R190E6
- Manufacturer
- Infineon Technologies
- Product Category
- MOSFET
- Description
- MOSFET N-Ch 650V 20.2A TO220-3 CoolMOS E6
Documents & Media
- Datasheets
- IPP60R190E6
Product Attributes
- Channel Mode :
- Enhancement
- Id - Continuous Drain Current :
- 20.2 A
- Maximum Operating Temperature :
- + 150 C
- Minimum Operating Temperature :
- - 55 C
- Mounting Style :
- Through Hole
- Number of Channels :
- 1 Channel
- Package / Case :
- TO-220-3
- Packaging :
- Tube
- Pd - Power Dissipation :
- 151 W
- Qg - Gate Charge :
- 63 nC
- Rds On - Drain-Source Resistance :
- 170 mOhms
- Technology :
- SI
- Tradename :
- CoolMOS
- Transistor Polarity :
- N-Channel
- Vds - Drain-Source Breakdown Voltage :
- 600 V
- Vgs - Gate-Source Voltage :
- - 20 V, + 20 V
- Vgs th - Gate-Source Threshold Voltage :
- 3.5 V
Description
MOSFET N-Ch 650V 20.2A TO220-3 CoolMOS E6
Price & Procurement
Associated Product
-
-
-
-
-
-
-
-
Amphenol FCIAutomotive Connectors Minitek MicroSpaceXS,1.27mm Crimp-to-Wire Connector Platform, Wire to Board Header, 3 Position., STG, Top Latch, Gold, WaterProof
-
-
You May Also Be Interested In
M12A-04PFFS-SH8002
105-02AFMM-SL7A01
8AP-04AFFM-SL7A01
105-02AFMM-SR7A02
M12A-04PMMC-SF8B30
MSBS-05PFFP-SF8001
M12B-05PFFS-SF8001
M12A-03BFFM-SL8A01
105-03AFMM-SR7A02
MSAP04MR-SAPMR-SDA05
1406321
1-2273023-1
1-2273077-1
ABD-03BFFM-LL7A01
1436437
1406320
8-03BFFM-SL7A05
ABD-06AFFM-LL7A01
BD-03AMFM-QL8D01
AU-04AFFM-LL6A02