Product overview
- Part Number
- IPL60R650P6SATMA1
- Manufacturer
- Infineon Technologies
- Product Category
- MOSFET
- Description
- MOSFET N-Ch 600V 6.7A ThinPAK 5x6
Documents & Media
- Datasheets
- IPL60R650P6SATMA1
Product Attributes
- Channel Mode :
- Enhancement
- Id - Continuous Drain Current :
- 6.7 A
- Maximum Operating Temperature :
- + 150 C
- Minimum Operating Temperature :
- - 40 C
- Mounting Style :
- SMD/SMT
- Number of Channels :
- 1 Channel
- Package / Case :
- ThinPAK-56-8
- Packaging :
- Cut Tape, MouseReel, Reel
- Pd - Power Dissipation :
- 56.8 W
- Qg - Gate Charge :
- 12 nC
- Rds On - Drain-Source Resistance :
- 650 mOhms
- Technology :
- SI
- Tradename :
- CoolMOS
- Transistor Polarity :
- N-Channel
- Vds - Drain-Source Breakdown Voltage :
- 600 V
- Vgs - Gate-Source Voltage :
- - 30 V, + 30 V
- Vgs th - Gate-Source Threshold Voltage :
- 4 V
Description
MOSFET N-Ch 600V 6.7A ThinPAK 5x6
Price & Procurement
Associated Product
-
-
-
-
-
-
-
Amphenol FCIAutomotive Connectors Minitek MicroSpaceXS,1.27mm Crimp-to-Wire Connector Platform, Wire to Board Header, 3 Position., STG, Top Latch, Gold, WaterProof
-
-
-
You May Also Be Interested In
RG2012V-751-B-T5
RG2012V-8450-B-T5
RG1608V-911-B-T5
RG2012V-103-B-T5
RG1608V-201-B-T5
PFC-W1206LF-11-2550-B
RG2012V-7151-W-T5
RG3216V-3010-C-T5
PFC-W1206LF-12-1300-A
PFC-W1206LF-12-5902-A
ERA-3AED2801V
ERA-3AED64R9V
5-1614968-4
PHP01206E47R5BST1
PTN1206E4752BST1
PTN1206E2212BST1
PTN1206E1870BST1
1-1625865-5
PATT0805K5R49FGT1
PATT0805K7R68FGT1