Product overview

Part Number
IPB60R120C7ATMA1
Manufacturer
Infineon Technologies
Product Category
MOSFET
Description
MOSFET HIGH POWER_NEW

Documents & Media

Datasheets
IPB60R120C7ATMA1

Product Attributes

Channel Mode :
Enhancement
Id - Continuous Drain Current :
19 A
Maximum Operating Temperature :
+ 150 C
Minimum Operating Temperature :
- 55 C
Mounting Style :
SMD/SMT
Number of Channels :
1 Channel
Package / Case :
TO-263-3
Packaging :
Cut Tape, MouseReel, Reel
Pd - Power Dissipation :
92 W
Qg - Gate Charge :
34 nC
Rds On - Drain-Source Resistance :
120 mOhms
Technology :
SI
Tradename :
CoolMOS
Transistor Polarity :
N-Channel
Vds - Drain-Source Breakdown Voltage :
600 V
Vgs - Gate-Source Voltage :
- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage :
3 V

Description

MOSFET HIGH POWER_NEW

Price & Procurement

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