Product overview
- Part Number
- IPP027N08N5AKSA1
- Manufacturer
- Infineon Technologies
- Product Category
- MOSFET
- Description
- MOSFET N-Ch 80V 120A TO220-3
Documents & Media
- Datasheets
- IPP027N08N5AKSA1
Product Attributes
- Channel Mode :
- Enhancement
- Id - Continuous Drain Current :
- 120 A
- Maximum Operating Temperature :
- + 175 C
- Minimum Operating Temperature :
- - 55 C
- Mounting Style :
- Through Hole
- Number of Channels :
- 1 Channel
- Package / Case :
- TO-220-3
- Packaging :
- Tube
- Pd - Power Dissipation :
- 214 W
- Qg - Gate Charge :
- 99 nC
- Rds On - Drain-Source Resistance :
- 3.4 mOhms
- Technology :
- SI
- Tradename :
- OptiMOS
- Transistor Polarity :
- N-Channel
- Vds - Drain-Source Breakdown Voltage :
- 80 V
- Vgs - Gate-Source Voltage :
- - 20 V, + 20 V
- Vgs th - Gate-Source Threshold Voltage :
- 2.2 V
Description
MOSFET N-Ch 80V 120A TO220-3
Price & Procurement
Associated Product
-
-
-
-
-
-
-
Amphenol FCIAutomotive Connectors Minitek MicroSpaceXS,1.27mm Crimp-to-Wire Connector Platform, Wire to Board Header, 3 Position., STG, Top Latch, Gold, WaterProof
-
-
-
You May Also Be Interested In
HW4F-31F22QD-A-12V
HW4F-32F40QD-W-12V
HW4F-33F04QD-W-24V
HW4F-33F04QD-Y-12V
HW4F-32F40QD-G-24V
HW4F-33F40QD-R-12V
HW4F-32F22QD-R-24V
HW4F-32F40QD-R-24V
HW4F-31F40QD-G-24V
HW4F-33F40QD-Y-12V
HW4F-32F22QD-A-24V
HW4F-21F22QD-Y-24V
HW4F-31F04QD-W-24V
HW4F-32F22QD-G-12V
HW4F-21F22QD-W-12V
HW4F-32F04QD-G-24V
HW4F-33F40QD-A-12V
HW4F-33F04QD-A-12V
HW4F-31F04QD-Y-12V
HW4F-21F22QD-W-24V