Product overview
- Part Number
- IPW60R099P6XKSA1
- Manufacturer
- Infineon Technologies
- Product Category
- MOSFET
- Description
- MOSFET HIGH POWER PRICE/PERFORM
Documents & Media
- Datasheets
- IPW60R099P6XKSA1
Product Attributes
- Channel Mode :
- Enhancement
- Id - Continuous Drain Current :
- 37.9 A
- Maximum Operating Temperature :
- + 150 C
- Minimum Operating Temperature :
- - 55 C
- Mounting Style :
- Through Hole
- Number of Channels :
- 1 Channel
- Package / Case :
- TO-247-3
- Packaging :
- Tube
- Pd - Power Dissipation :
- 278 W
- Qg - Gate Charge :
- 70 nC
- Rds On - Drain-Source Resistance :
- 89 mOhms
- Technology :
- SI
- Tradename :
- CoolMOS
- Transistor Polarity :
- N-Channel
- Vds - Drain-Source Breakdown Voltage :
- 600 V
- Vgs - Gate-Source Voltage :
- - 20 V, + 20 V
- Vgs th - Gate-Source Threshold Voltage :
- 3.5 V
Description
MOSFET HIGH POWER PRICE/PERFORM
Price & Procurement
Associated Product
-
-
-
-
-
-
-
-
Amphenol FCIAutomotive Connectors Minitek MicroSpaceXS,1.27mm Crimp-to-Wire Connector Platform, Wire to Board Header, 3 Position., STG, Top Latch, Gold, WaterProof
-
-
You May Also Be Interested In
RG2012V-2371-P-T1
RG2012V-392-P-T1
RG2012V-4751-P-T1
RG2012V-431-P-T1
RG2012V-2050-P-T1
RG2012V-3481-P-T1
RG2012V-6811-P-T1
RG2012V-3090-P-T1
RG2012V-5621-P-T1
RG2012V-2370-P-T1
RG2012V-4020-P-T1
RG2012V-1781-P-T1
RG2012V-5620-P-T1
RG2012V-241-P-T1
RG2012V-3651-P-T1
RG2012V-2100-P-T1
RG2012V-3011-P-T1
RG2012V-271-P-T1
RG2012V-1910-P-T1
RG2012V-5230-P-T1