Product overview

Part Number
TK100A10N1,S4X
Manufacturer
Toshiba
Product Category
MOSFET
Description
MOSFET MOSFET NCh 3.1ohm VGS10V10uAVDS100V

Documents & Media

Datasheets
TK100A10N1,S4X

Product Attributes

Channel Mode :
Enhancement
Id - Continuous Drain Current :
100 A
Maximum Operating Temperature :
+ 150 C
Minimum Operating Temperature :
- 55 C
Mounting Style :
Through Hole
Number of Channels :
1 Channel
Package / Case :
TO-220-3
Packaging :
Tube
Pd - Power Dissipation :
45 W
Qg - Gate Charge :
140 nC
Rds On - Drain-Source Resistance :
3.1 mOhms
Technology :
SI
Tradename :
U-MOSVIII-H
Transistor Polarity :
N-Channel
Vds - Drain-Source Breakdown Voltage :
100 V
Vgs - Gate-Source Voltage :
- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage :
4 V

Description

MOSFET MOSFET NCh 3.1ohm VGS10V10uAVDS100V

Price & Procurement

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