Product overview
- Part Number
- CSD86311W1723
- Manufacturer
- Texas Instruments
- Product Category
- MOSFET
- Description
- MOSFET Dual N-Channel Nex FET Pwr MOSFET
Documents & Media
- Datasheets
- CSD86311W1723
Product Attributes
- Channel Mode :
- Enhancement
- Id - Continuous Drain Current :
- 5 A
- Maximum Operating Temperature :
- + 150 C
- Minimum Operating Temperature :
- - 55 C
- Mounting Style :
- SMD/SMT
- Number of Channels :
- 2 Channel
- Package / Case :
- DSBGA-12
- Packaging :
- Cut Tape, MouseReel, Reel
- Pd - Power Dissipation :
- 1.5 W
- Qg - Gate Charge :
- 3.1 nC
- Rds On - Drain-Source Resistance :
- 42 mOhms
- Technology :
- SI
- Tradename :
- NexFET
- Transistor Polarity :
- N-Channel
- Vds - Drain-Source Breakdown Voltage :
- 25 V
- Vgs - Gate-Source Voltage :
- - 8 V, + 10 V
- Vgs th - Gate-Source Threshold Voltage :
- 1 V
Description
MOSFET Dual N-Channel Nex FET Pwr MOSFET
Price & Procurement
Associated Product
-
-
-
-
-
-
-
Amphenol FCIAutomotive Connectors Minitek MicroSpaceXS,1.27mm Crimp-to-Wire Connector Platform, Wire to Board Header, 3 Position., STG, Top Latch, Gold, WaterProof
-
-
-
You May Also Be Interested In
C1206X751GBTACAUTO7210
C1206X161KCTACAUTO7210
C0805X472F3JAC7210
C2220C300GCTACTU
C2220X111KGTACAUTO
GQM22M5C2H2R7BB01K
C1210C432FCGAC7210
GQM22M5C2H2R2BB01K
GQM22M5C2H1R6BB01K
GQM22M5C2H1R8BB01K
GQM22M5C2H5R0BB01K
GQM22M5C2H2R4BB01K
GQM22M5C2H4R0BB01K
GQM22M5C2HR50BB01K
GQM22M5C2H1R1BB01K
GQM22M5C2H3R9BB01K
C1210C432FCGACAUTO7210
GQM22M5C2H4R7BB01K
C1812X222JFTACAUTO7210
C1206C393F3JACTU