Product overview
- Part Number
- IPW60R190P6
- Manufacturer
- Infineon Technologies
- Product Category
- MOSFET
- Description
- MOSFET HIGH POWER_PRC/PRFRM
Documents & Media
- Datasheets
- IPW60R190P6
Product Attributes
- Channel Mode :
- Enhancement
- Id - Continuous Drain Current :
- 20.2 A
- Maximum Operating Temperature :
- + 150 C
- Minimum Operating Temperature :
- - 55 C
- Mounting Style :
- Through Hole
- Number of Channels :
- 1 Channel
- Package / Case :
- TO-247-3
- Packaging :
- Tube
- Pd - Power Dissipation :
- 151 W
- Qg - Gate Charge :
- 37 nC
- Rds On - Drain-Source Resistance :
- 171 mOhms
- Technology :
- SI
- Tradename :
- CoolMOS
- Transistor Polarity :
- N-Channel
- Vds - Drain-Source Breakdown Voltage :
- 600 V
- Vgs - Gate-Source Voltage :
- - 20 V, + 20 V
- Vgs th - Gate-Source Threshold Voltage :
- 3.5 V
Description
MOSFET HIGH POWER_PRC/PRFRM
Price & Procurement
Associated Product
-
-
-
-
-
-
-
Amphenol FCIAutomotive Connectors Minitek MicroSpaceXS,1.27mm Crimp-to-Wire Connector Platform, Wire to Board Header, 3 Position., STG, Top Latch, Gold, WaterProof
-
-
-
You May Also Be Interested In
983-0SE22-19PN
MS27468T25F35JB
DJT14F25-35JB
EN2997KE61412DN
HEV.TM.332.XLDZ
HEX.TM.332.XLDZ
HEW.TM.332.XLNZ
HEV.TM.332.XLDP
HEW.TM.332.XLNP
HEX.TM.332.XLDP
HER.TM.332.XLNZ
EN2997SE71412FN
983-7SE14-12SN
EN2997S02219F6
MS3120F24-61S(LC)
983-0S22-19S6
D38999/24FF35AB-P169
D38999/24FH55JB
EN2997SE61415C6
EN2997SE61624C6