Datasheets

UF3C065030B3

Channel Mode :

Enhancement

Id - Continuous Drain Current :

65 A

Maximum Operating Temperature :

+ 175 C

Minimum Operating Temperature :

- 25 C

Mounting Style :

SMD/SMT

Number of Channels :

1 Channel

Package / Case :

D2PAK-3

Packaging :

Cut Tape, Reel

Pd - Power Dissipation :

242 W

Qg - Gate Charge :

51 nC

Rds On - Drain-Source Resistance :

27 mOhms

Technology :

SiC

Tradename :

SiC FET

Transistor Polarity :

N-Channel

Vds - Drain-Source Breakdown Voltage :

650 V

Vgs - Gate-Source Voltage :

- 25 V, + 25 V

Vgs th - Gate-Source Threshold Voltage :

4 V