Datasheets

SI8800EDB-T2-E1

Channel Mode :

Enhancement

Id - Continuous Drain Current :

2.8 A

Maximum Operating Temperature :

+ 150 C

Minimum Operating Temperature :

- 55 C

Mounting Style :

SMD/SMT

Number of Channels :

1 Channel

Package / Case :

MicroFoot-4

Packaging :

Cut Tape, MouseReel, Reel

Pd - Power Dissipation :

900 MW

Qg - Gate Charge :

8.3 nC

Rds On - Drain-Source Resistance :

80 mOhms

Technology :

SI

Tradename :

TrenchFET

Transistor Polarity :

N-Channel

Vds - Drain-Source Breakdown Voltage :

20 V

Vgs - Gate-Source Voltage :

- 8 V, + 8 V

Vgs th - Gate-Source Threshold Voltage :

400 mV